| PART |
Description |
Maker |
| V29C51002B V29C51002T V29C51002B-55T V29C51002T-55 |
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY
2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| AM29F400AB-70FI AM29F400AB-70SC AM29F400AT-70SC AM |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO48
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO44
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO44
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| M5M532R16J-10 M5M532R16J-12 M5M532R16J-15 M5M532R1 |
0.5 in Diameter, 200mA Single Deck Rotary Switch
From old datasheet system
524288-BIT CMOS STATIC RAM
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M44170-10S M5M44170-7S |
FAST PAGE MODE 4,194,304-BIT (262,144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模,194,304位（262,144字由16位）动态随机存储器
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MSM27C201CZ |
262,144-Word x 8-Bit One Time PROM(256K字位一次性可编程ROM 262,144字8位一次性可编程56K字8位一次性可编程ROM的字
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM514265ESL-XXTS-K MSM514265E MSM514265E-60JS MSM |
262,144-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 262,144字16位动态随机存储器：快速页面模式型与江
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| AM50DL9608GT75IS AM50DL9608GT70IS AM50DL9608GT70IT |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc.
Spansion, Inc.
|
| M5M5408BTP M5M5408BRT M5M5408BFP M5M5408BFP-55LI |
524288-word by 8-bit CMOS static RAM, 55ns
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| AM29F400BT-50FC AM29F400BT-50FI AM29F400BB-50EE AM |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF2805 with Lead Free Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3215 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL520N with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL3705ZS with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7492 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ46ZS with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB4215 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package; A IRFPS3810 with Standard Packaging
80V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU2908 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1310NL with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package; A IRLL2703 with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ34VL with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFIZ24E with Standard Packaging
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package. Recommended replacement is IRF6621; A IRF6604 with Standard Tape and Reel Quantity
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRLZ34NS with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7452 with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3803V with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ48NS with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF3710ZL with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRLI2203N with Lead Free Packaging
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRL3714ZL with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ48ZL with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL3714S with Lead Free Packaging
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL3714S with Standard Packaging
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 55 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 55 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| M5M5T5636UG |
MITSUBISHI LSIs 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5408BFP M5M5408BKR M5M5408BKV M5M5408BRT M5M540 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M5V408BFP M5M5V408BKR M5M5V408BKV M5M5V408BRT M5 |
From old datasheet system
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
